NCE3400AY - NCE Power Semiconductor

NCE3400AY N-Channel Enhancement Mode Power MOSFET

The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V D G S Schem.

Features

● VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V D G S Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment
● PWM applications
● Load switch
● Power management SOT23-3L top view Package Marking and Ordering Information Device Marking Device Device Package 3400AY NCE3400AY SOT23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate.