The NCE3401Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High power and current .
● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
D G
S Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3401Y
NCE3401Y
SOT-23-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE3401 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
2 | NCE3401A |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
3 | NCE3401AY |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
4 | NCE3400 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE3400A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
6 | NCE3400AY |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
7 | NCE3402 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE3402A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE3404 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE3404Y |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
11 | NCE3407 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
12 | NCE3407A |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET |