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Technical Data : Page1 of 3 N630CH42 - Power Thyristor 4200 VDRM; ********************************************************************************************************** HIGH POWER THYRISTOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum T.
. All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N630CH 4200 4200 4300 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 150 mA (3) 1000 V/sec Conducting - on state.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | N6006NZ |
Renesas |
N-channel MOSFET |
|
| 2 | N6012ZD020 |
IXYS |
Phase Control Thyristor |
|
| 3 | N6012ZD040 |
IXYS |
Phase Control Thyristor |
|
| 4 | N6012ZD060 |
IXYS |
Phase Control Thyristor |
|
| 5 | N6171A |
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Agilent(Hewlett-Packard) |
MATLAB Data Analysis Software |
|
| 6 | N6200 |
NIKO-SEM |
Step-Down Converter |
|
| 7 | N620CH |
YZPST |
HIGH POWER THYRISTOR |
|
| 8 | N64S0818HDA |
AMI SEMICONDUCTOR |
(N64S0818HDA / N64S0830HDA) 64Kb Low Power Serial SRAMs |
|
| 9 | N64S0830HDA |
AMI SEMICONDUCTOR |
(N64S0818HDA / N64S0830HDA) 64Kb Low Power Serial SRAMs |
|
| 10 | N64S818HA |
ON Semiconductor |
64 kb Low Power Serial SRAMs |
|
| 11 | N64S830HA |
ON Semiconductor |
64 kb Low Power Serial SRAMs |
|
| 12 | N64T1630C1B |
NanoAmp Solutions |
64Mb Ultra-Low Power Asynchronous CMOS PSRAM |
|