N6006NZ - Renesas

N6006NZ N-channel MOSFET

The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 A • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Platin.

Features

• Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)
• High current ID(DC) = ±6.0 A
• RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tube Packing 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package Isolated TO-220 1.95g TYP. Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total.