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N630CH42 |
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| Part Number | N630CH42 |
| Manufacturer | YZPST |
| Description | Technical Data : Page1 of 3 N630CH42 - Power Thyristor 4200 VDRM; ********************************************************************************************************** HIGH POWER THYRISTOR P... |
| Features |
. All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
N630CH
4200
4200
4300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM dV/dt (4)
150 mA (3) 1000 V/sec
Conducting - on state... |
| Document |
 N630CH42 Data Sheet
PDF 170.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | N6006NZ |
Renesas |
N-channel MOSFET |
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| 2 | N6012ZD020 |
IXYS |
Phase Control Thyristor |
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| 3 | N6012ZD040 |
IXYS |
Phase Control Thyristor |
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| 4 | N6012ZD060 |
IXYS |
Phase Control Thyristor |
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| 5 | N6171A |
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Agilent(Hewlett-Packard) |
MATLAB Data Analysis Software |
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