N64T1630C1B - NanoAmp Solutions

N64T1630C1B 64Mb Ultra-Low Power Asynchronous CMOS PSRAM

3 A0 A3 A5 A17 A21 A14 A12 A9 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 A20 Pin Name A0-A21 WE CE ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ Pin Function Address Inputs Write Enable Input Chip Enable Input Deep Sleep Input Output Enable Input Lower Byte Enable Input Upper Byte Enable I.

Features

• Dual voltage rails for optimum power & performance Vcc - 2.7V - 3.3V Vccq - 2.7V to 3.3V
• Fast Cycle Times TACC < 70 nS (60ns future) TPACC < 25 nS
• Very low standby current ISB < 170µA
• Very low operating current Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh) Table 1: Product Family Part Number N64T1630C1BZ Package Type BGA Operating Temperature -25oC to +85oC Power Supply 2.7 - 3.3V I/O Supply 2.7 - 3.3V Speed 70ns Standby Current (ISB), Max 170µA Ball Congiguration 1 A B C D E F G H LB I/O8 I/O9 Ball Description 3 A0 A3 A5 A17 A21 A14 A12 A9 .