The InterFET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View S 42 D S Standard Parts • IFN6449, IFN6450 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Vol.
• Typical Input Capacitance: 6pF
• High Breakdown Voltage: -400V Typical
• Small Die: 746um X 746um X 203um
• Bond Pads: 95um Diameter
• Substrate Connected to Gate
• Au Back-Side Finish
Applications
• General Purpose Amplifier
• High Breakdown Voltage
• Custom Part Options
Description
The InterFET N0042Y Geometry is targeted for high voltage applications. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
S
42
D
S
Standard Parts
• IFN6449, IFN6450
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | N0001H |
InterFET |
Process Geometry | |
2 | N0014EU |
InterFET |
Process Geometry | |
3 | N0014L |
InterFET |
Process Geometry | |
4 | N0016H |
InterFET |
Process Geometry | |
5 | N0026S |
InterFET |
Process Geometry | |
6 | N0030L |
InterFET |
Process Geometry | |
7 | N0032H |
InterFET |
Process Geometry | |
8 | N0072L |
InterFET |
Process Geometry | |
9 | N0072S |
InterFET |
Process Geometry | |
10 | N0118GA |
WeEn |
SCR | |
11 | N0131SH120 |
IXYS |
Phase Control Thyristor | |
12 | N0131SH160 |
IXYS |
Phase Control Thyristor |