N0001H - InterFET

N0001H Process Geometry

The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications. Geometry Top View 01 G S-D S-D G Test Pattern Standard Parts • 2N4117/A, 2N4118/A, 2N4119/A • PAD1, PAD2, PAD5, PAD10 • PAD20, PAD50 • DPAD1, DPAD2, DPAD5, DPAD10 • DPAD20, DPAD50, DPAD100 • IFN42.

Features

• Low Input Capacitance: 2.0pF Typical
• Low Gate Leakage: 0.5pA Typical
• High Breakdown Voltage: -60V Typical
• High Input Impedance
• Small Die: 365um X 365um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• Small Signal Amplifier
• Ultrahigh Impedance Pre-Amplifier
• Pico-Amp Diodes (PAD)
• High Input Impedance Buffers
• Custom Part Options Description The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications. Geometry Top View 01 G S-D S-.