N0030L - InterFET

N0030L Process Geometry

The InterFET N0030L Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View 30 G S-D S-D G Test Pattern Standard Parts • IFN5911, IFN5912 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS.

Features

• Low Input Capacitance: 5.0pF Typical
• Low Gate Leakage: 10pA Typical
• High Breakdown Voltage: -30V Typical
• High Input Impedance
• Small Die: 365um X 365um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• Low-Noise, High Gain Amplifier
• Small Signal Amplifier
• Custom Part Options Description The InterFET N0030L Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View 30 G S-D S-D G Test Pattern Standard Parts
• IFN5911, IFN5912 Pr.