N0032H - InterFET

N0032H Process Geometry

The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View 32 G S-D S-D G Test Pattern Standard Parts • 2N3821, 2N3822 • 2N3823, 2N3824 • 2N4222, 2N4222A Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain .

Features

• Low Input Capacitance: 6.0pF Typical
• Low Gate Leakage: 10pA Typical
• High Breakdown Voltage: -60V Typical
• Small Die: 416um X 416um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• General Purpose Amplifier
• Small Signal Amplifier
• Custom Part Options Description The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View 32 G S-D S-D G Test Pattern Standard Parts
• 2N3821, 2N3822
• 2N3823, 2N3824
• 2N4222, 2N4222.