N0014EU - InterFET

N0014EU Process Geometry

The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View S-D S-D NC D 14EU Note: Gate connected to backside metal Connection Configuration Diode Gate Source-Drain Source-Drain Product Summary Parameters BVGSS Gate to Sou.

Features

• Low Input Capacitance: 2.3pF Typical
• Low Gate Leakage: 1.5pA Typical
• High Breakdown Voltage: -30V Typical
• High Input Impedance
• Die Size: 482um X 482um X 203um
• Bond Pads: 90um Diameter
• Substrate Connected to Gate
• Au Back Side Finish
• Flip Chip Bumped Package Option Applications
• Small Signal Amplifiers
• Audio Amplifiers
• Low Noise High Gain Amplifier
• RF Amplifiers
• Custom Part Options Description The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications. Geometry To.