MTW7N80E - ON Semiconductor

MTW7N80E Power MOSFET 7 Amp

MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff.

Features

erature
• Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage
  – Continuous
  – Non
  –Repetitive (tp ≤ 10 ms) Drain Current
  – Continuous Drain Current
  – Continuous @ 100°C Drain Current
  – Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energy
  – Starting TJ = 25°C (VDD =100 Vdc, VGS = 10 Vdc, IL = 21 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance
  – Junction to Case Thermal R.