MTW26N15E - Motorola

MTW26N15E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain.

Features

g Hardware ™ Data Sheet MTW26N15E Motorola Preferred Device TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM ® D G S CASE 340K
  –01, Style 1 TO
  –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energy — Starting TJ = 25°C (VDD = .