MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy ef.
perature
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
500
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
500
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs)
ID
20
ID
14.1
IDM
60
Total Power Dissipation Derate above 25°C
PD
250
2.0
Operating and Storage Temperature Range TJ, Tstg −55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Sta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTW23N25E |
Motorola |
TMOS POWER FET 23 AMPERES 250 VOLTS | |
2 | MTW24N40E |
Motorola |
TMOS POWER FET 24 AMPERES 400 VOLTS | |
3 | MTW26N15E |
Motorola |
TMOS POWER FET | |
4 | MTW10N100E |
Motorola |
TMOS POWER FET | |
5 | MTW10N100E |
ON Semiconductor |
Power MOSFET | |
6 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR | |
7 | MTW14N50E |
Motorola |
TMOS POWER FET | |
8 | MTW14N50E |
ON Semiconductor |
Power MOSFET | |
9 | MTW16N40E |
Motorola |
TMOS POWER FET | |
10 | MTW16N40E |
ON Semiconductor |
Power MOSFET | |
11 | MTW32N20E |
Motorola |
TMOS POWER FET | |
12 | MTW32N20E |
ON Semiconductor |
Power MOSFET |