MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW23N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain.
g Hardware
™
Data Sheet
MTW23N25E
Motorola Preferred Device
TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM
®
D
G S
CASE 340K
–01, Style 1 TO
–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain
–Source Voltage Drain
–Gate Voltage (RGS = 1.0 MΩ) Gate
–Source Voltage — Continuous Gate
–Source Voltage — Non
–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain
–to
–Source Avalanche Energy — Startin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTW20N50E |
ON Semiconductor |
Power MOSFET | |
2 | MTW20N50E |
Motorola |
Power MOSFET | |
3 | MTW24N40E |
Motorola |
TMOS POWER FET 24 AMPERES 400 VOLTS | |
4 | MTW26N15E |
Motorola |
TMOS POWER FET | |
5 | MTW10N100E |
Motorola |
TMOS POWER FET | |
6 | MTW10N100E |
ON Semiconductor |
Power MOSFET | |
7 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR | |
8 | MTW14N50E |
Motorola |
TMOS POWER FET | |
9 | MTW14N50E |
ON Semiconductor |
Power MOSFET | |
10 | MTW16N40E |
Motorola |
TMOS POWER FET | |
11 | MTW16N40E |
ON Semiconductor |
Power MOSFET | |
12 | MTW32N20E |
Motorola |
TMOS POWER FET |