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isc N-Channel MOSFET Transistor INCHANGE Semiconductor MTW32N20E ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM R.
·With TO-247 packaging
·With low gate drive requirements
·Low switching loss
·Low on-state resistance
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
32 19
128
PD
Total Dissipation
180
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃.
MTW32N20E - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect.
MTW32N20E - ON Semiconductor
MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high ene.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW32N25E |
Motorola |
TMOS POWER FET |
|
| 2 | MTW33N10E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW35N15E |
ON Semiconductor |
Power MOSFET |
|
| 4 | MTW35N15E |
Motorola |
TMOS POWER FET |
|
| 5 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 6 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 7 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|
| 8 | MTW14N50E |
Motorola |
TMOS POWER FET |
|
| 9 | MTW14N50E |
ON Semiconductor |
Power MOSFET |
|
| 10 | MTW16N40E |
Motorola |
TMOS POWER FET |
|
| 11 | MTW16N40E |
ON Semiconductor |
Power MOSFET |
|
| 12 | MTW20N50E |
ON Semiconductor |
Power MOSFET |
|