MTW33N10E - Motorola

MTW33N10E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ MTW33N10E Motorola Preferred Device Power Field Effect Transistor TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation m.

Features

ated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware D N-Channel TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM ® G S CASE 340F, Style 1 TO-247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 MΩ) Gate-Source Voltage — Continuous Gate-Source Voltage — Non-Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy — Start.