MTP6N60E |
Part Number | MTP6N60E |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement... |
Features |
Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS ® D CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single ... |
Document |
MTP6N60E Data Sheet
PDF 156.71KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTP6N60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
2 | MTP6N60E |
ON Semiconductor |
Power Field Effect Transistor | |
3 | MTP6N10 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
4 | MTP60N05HDL |
Motorola |
TMOS POWER FET | |
5 | MTP60N06HD |
Motorola |
TMOS POWER FET |