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AJlIC:I=ICN 1-· 4KMxT45CSR16A0M4 SRAM 4Kx4 SRAM •U1 -------------------------------------------~ FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±1O% power supplL • Easy memory expansion with CE option • All inputs and outputs are TIL-compatible OPTIONS • Timing 9ns access IOns ac.
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±1O% power supplL
• Easy memory expansion with CE option
• All inputs and outputs are TIL-compatible
OPTIONS
• Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access
MARKING
-9 -10 -12 -15 -20 -25
• Packages Plastic DIP (300 mil)
Plastic SOJ (300 mil)
None DJ
PIN ASSIGNMENT (Top View)
2o-Pin DIP (5A-1)
PA4 1 '--' 20 Vee
AS 2 A6 3 A7 4 AS 5 A9 6
19 PA3
18 PA2
17 PAl
16 pAD 15 pDQ4
Al0 7 All 8
14 P 003
13 pDQ2
CE 9 Vss 10
12 POOl
P11 WE
l-
'~I'll.
V,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT5C1601 |
Micron |
16K x 1 SRAM |
|
| 2 | MT5C1605 |
Micron |
4K x 4 SRAM |
|
| 3 | MT5C1608 |
Micron |
2K x 8 SRAM |
|
| 4 | MT5C1001 |
ASI |
SRAM |
|
| 5 | MT5C1001 |
Micross |
1M x 1 SRAM |
|
| 6 | MT5C1001 |
Micron |
1 Meg x 1 SRAM |
|
| 7 | MT5C1005 |
ASI |
SRAM MEMORY ARRAY |
|
| 8 | MT5C1005 |
Micross |
256K x 4 SRAM |
|
| 9 | MT5C1005 |
Micron |
256K x 4 SRAM |
|
| 10 | MT5C1008 |
ASI |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
|
| 11 | MT5C1008 |
Micron |
128K x 8 SRAM |
|
| 12 | MT5C1008LL |
Austin Semiconductor |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER |
|