MT5C1008LL - Austin Semiconductor

MT5C1008LL 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER

C No. 111 The MT5C1008 SRAM is a high-performance CMOS static RAM organized as 131, 072 words by 8 bits, offering low active power and ultra low standby and data retention current levels. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), and active Low Output Enable (OE), and three-state drivers. Writing .

Features

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• www.DataSheet4U.com A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND High Speed: 30 ns Low active power: 715 mW worst case Low CMOS standby power: 3.3 mW worst case 2.0V data retention, Ultra Low 0.3mW worst case power dissipation Battery backup applications Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE1, CE2, and OE options OPTIONS
• Timing 30ns access
• Package(s) Ceramic DIP (400 mil)
• Temperature Military (-55°C to +125°C) MARKING -30 GENERAL DESCRIPTION C No. 111 The MT5C1008 SRAM is a high-performance CMOS static RAM .