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SRAM 16K x 1 SRAM FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible OPTIONS • Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access MARKING -9 -10 -12 -15 -20 -2.
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±10% power supply
• Easy memory expansion with CE option
• All inputs and outputs are TTL-compatible
OPTIONS
• Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access
MARKING
-9 -10 -12 -15 -20 -25
• Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
• 2V data retention
None DJ
L
• Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C)
None IT
AT
XT
• Part Number Example: MT5C1601DJ-12 L
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT5C1604 |
Micron |
4K x 4 SRAM |
|
| 2 | MT5C1605 |
Micron |
4K x 4 SRAM |
|
| 3 | MT5C1608 |
Micron |
2K x 8 SRAM |
|
| 4 | MT5C1001 |
ASI |
SRAM |
|
| 5 | MT5C1001 |
Micross |
1M x 1 SRAM |
|
| 6 | MT5C1001 |
Micron |
1 Meg x 1 SRAM |
|
| 7 | MT5C1005 |
ASI |
SRAM MEMORY ARRAY |
|
| 8 | MT5C1005 |
Micross |
256K x 4 SRAM |
|
| 9 | MT5C1005 |
Micron |
256K x 4 SRAM |
|
| 10 | MT5C1008 |
ASI |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
|
| 11 | MT5C1008 |
Micron |
128K x 8 SRAM |
|
| 12 | MT5C1008LL |
Austin Semiconductor |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER |
|