MSC0311WE - MORESEMI

MSC0311WE Dual N-Channel MOSFET

MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD proteted Application ●PWM application ●Load switch PIN Configuration Lead Fre.

Features

● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD proteted Application
●PWM application
●Load switch PIN Configuration Lead Free Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0311WE MSC0311WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo.