1700V, 35 mΩ N-Channel mSiC™ MOSFET MSC035SMA170B4 Product Overview 1700V, 35 mΩ typical at 20 VGS, 41 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247 4-lead with a source sense. Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperatur.
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant Benefits
• High efficiency to enable lighter and more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership Applications
• Photovoltaic (PV) inverter, converter, and industrial motor drives
• Smart grid t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC035SMA170B |
Microchip |
N-Channel MOSFET | |
2 | MSC035SMA070B |
Microchip |
N-Channel MOSFET | |
3 | MSC035SMA070B |
Microsemi |
N-Channel Power MOSFET | |
4 | MSC0305W |
MORESEMI |
Dual P-Channel MOSFET | |
5 | MSC030SDA070B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
6 | MSC030SDA120B |
Microchip |
Schottky Diode | |
7 | MSC030SDA170B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
8 | MSC030SDA330B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
9 | MSC0311WE |
MORESEMI |
Dual N-Channel MOSFET | |
10 | MSC010SDA070B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
11 | MSC010SDA070BCT |
Microchip |
10A Silicon Carbide Schottky Dual Diode | |
12 | MSC010SDA070K |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode |