MSC010SDA070K Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070K device is a 700 V, 10 A SiC SBD in a two-lead TO.
The following are key features of the MSC010SDA070K device:
• No reverse recovery
• Low forward voltage
• Low leakage current
• Avalanche-energy rated
• RoHS compliant
Benefits
The following are benefits of the MSC010SDA070K device:
• High switching frequency
• Low switching losses
• Low noise (EMI) switching
• Higher reliability systems
• Increased system power density
Applications
The MSC010SDA070K device is designed for the following applications:
• Power factor correction (PFC)
• Anti-parallel diode
– Switch-mode power supply
– Inverters/converters
– Motor controllers
• Freewheeling diode .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC010SDA070B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
2 | MSC010SDA070BCT |
Microchip |
10A Silicon Carbide Schottky Dual Diode | |
3 | MSC010SDA070S |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
4 | MSC010SDA120B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
5 | MSC010SDA170B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
6 | MSC015SDA120B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
7 | MSC015SMA070B |
Microsemi |
Silicon Carbide N-Channel Power MOSFET | |
8 | MSC015SMA070B |
Microchip |
N-Channel MOSFET | |
9 | MSC015SMA070B4 |
Microchip |
N-Channel MOSFET | |
10 | MSC015SMA070B4 |
Microsemi |
Silicon Carbide N-Channel Power MOSFET | |
11 | MSC017SMA120B |
Microchip |
N-Channel MOSFET | |
12 | MSC0203S |
MORESEMI |
N/P-Channel Power MOSFET |