MSC0311WE |
Part Number | MSC0311WE |
Manufacturer | MORESEMI |
Description | MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current... |
Features |
● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD proteted Application ●PWM application ●Load switch PIN Configuration Lead Free Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0311WE MSC0311WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo... |
Document |
MSC0311WE Data Sheet
PDF 449.10KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC0305W |
MORESEMI |
Dual P-Channel MOSFET | |
2 | MSC030SDA070B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
3 | MSC030SDA120B |
Microchip |
Schottky Diode | |
4 | MSC030SDA170B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
5 | MSC030SDA330B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode |