MSC035SMA070B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B device is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package. .
The following are key features of the MSC035SMA070B device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits
The following are benefits of the MSC035SMA070B device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system c.
700V, 35 mΩ N-Channel mSiC™ MOSFET MSC035SMA070B Product Overview 700V, 35 mΩ typical at 20 VGS, 40 mΩ typical at 18 VGS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC035SMA170B |
Microchip |
N-Channel MOSFET | |
2 | MSC035SMA170B4 |
Microchip |
N-Channel MOSFET | |
3 | MSC0305W |
MORESEMI |
Dual P-Channel MOSFET | |
4 | MSC030SDA070B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
5 | MSC030SDA120B |
Microchip |
Schottky Diode | |
6 | MSC030SDA170B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
7 | MSC030SDA330B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
8 | MSC0311WE |
MORESEMI |
Dual N-Channel MOSFET | |
9 | MSC010SDA070B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
10 | MSC010SDA070BCT |
Microchip |
10A Silicon Carbide Schottky Dual Diode | |
11 | MSC010SDA070K |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
12 | MSC010SDA070S |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode |