MSC0211GE - MORESEMI

MSC0211GE Dual N-Channel MOSFET

MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ● PWM application ● Load switch PIN Configur.

Features

● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Lead Free Application
● PWM application
● Load switch PIN Configuration Marking and pin assignment TSSOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0211GE MSC0211GE TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-S.