MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ● Motor drive ● Load switch ● Power management PIN Configuration Marking .
● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V
● High power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Lead Free
Application
● Motor drive
● Load switch
● Power management
PIN Configuration
Marking and pin assignment
SOP-8 top view
D1 G1
G2
D2
S1 S2
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSC0207W
MSC0207W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC0207GE |
MORESEMI |
Dual N-Channel MOSFET | |
2 | MSC0207SE |
MORESEMI |
Dual N-Channel MOSFET | |
3 | MSC0203S |
MORESEMI |
N/P-Channel Power MOSFET | |
4 | MSC0205W |
MORESEMI |
Dual N-Channel MOSFET | |
5 | MSC0206SE |
MORESEMI |
Dual N-Channel MOSFET | |
6 | MSC0206W |
MORESEMI |
Dual N-Channel MOSFET | |
7 | MSC020SDA120B |
Microsemi |
Zero Recovery Silicon Carbide Schottky Diode | |
8 | MSC0211GE |
MORESEMI |
Dual N-Channel MOSFET | |
9 | MSC010SDA070B |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
10 | MSC010SDA070BCT |
Microchip |
10A Silicon Carbide Schottky Dual Diode | |
11 | MSC010SDA070K |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode | |
12 | MSC010SDA070S |
Microchip |
Zero Recovery Silicon Carbide Schottky Diode |