MSC0207GE - MORESEMI

MSC0207GE Dual N-Channel MOSFET

MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●PWM application ●Load switch PIN Configura.

Features

● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Lead Free Application
●PWM application
●Load switch PIN Configuration Marking and pin assignment TSSOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0207GE MSC0207GE TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-So.