MSC0206W - MORESEMI

MSC0206W Dual N-Channel MOSFET

MSC0206W 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninter.

Features

● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current Lead Free Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0206W MSC0206W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted.