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: The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Bas.
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• 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION :
The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO PDISS IC TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature
Val.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS125 |
Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers |
|
| 2 | MS1251 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
|
| 3 | MS1252 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
|
| 4 | MS1257 |
CIT |
CIT SWITCH |
|
| 5 | MS120 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 6 | MS122078 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 7 | MS1224 |
CIT Relay & Switch |
CIT SWITCH |
|
| 8 | MS1226 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 9 | MS1226 |
Microsemi |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 10 | MS1227 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 11 | MS124695 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 12 | MS1261 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
|