The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter C.
175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS1262 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS | |
2 | MS1263 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS | |
3 | MS120 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
4 | MS122078 |
Military-Fasteners |
SCREW THREAD INSERT | |
5 | MS1224 |
CIT Relay & Switch |
CIT SWITCH | |
6 | MS1226 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
7 | MS1226 |
Microsemi |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
8 | MS1227 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
9 | MS124695 |
Military-Fasteners |
SCREW THREAD INSERT | |
10 | MS125 |
Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers | |
11 | MS1251 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS | |
12 | MS1252 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |