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The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector - Base Voltage Collector.
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• 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED COMMON EMITTER CONFIGURATION VSWR = 20:1
DESCRIPTION:
The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TJ T STG
Parameter
Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS125 |
Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers |
|
| 2 | MS1252 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
|
| 3 | MS1253 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
|
| 4 | MS1257 |
CIT |
CIT SWITCH |
|
| 5 | MS120 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 6 | MS122078 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 7 | MS1224 |
CIT Relay & Switch |
CIT SWITCH |
|
| 8 | MS1226 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 9 | MS1226 |
Microsemi |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 10 | MS1227 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 11 | MS124695 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 12 | MS1261 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
|