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The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation J.
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• 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC PDISS TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
36 18 4.0 4.5 80 +200 -65 to +150
Unit
V V V A W °C °C
Thermal Data
RT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS122078 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 2 | MS1224 |
CIT Relay & Switch |
CIT SWITCH |
|
| 3 | MS1226 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 4 | MS1226 |
Microsemi |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
|
| 5 | MS120 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 6 | MS124695 |
Military-Fasteners |
SCREW THREAD INSERT |
|
| 7 | MS125 |
Diotec Semiconductor |
Surface Mount Si-Bridge-Rectifiers |
|
| 8 | MS1251 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
|
| 9 | MS1252 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
|
| 10 | MS1253 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
|
| 11 | MS1257 |
CIT |
CIT SWITCH |
|
| 12 | MS1261 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
|