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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF959T1/D The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9 GHz DC .
a 9 GHz DC current gain
–bandwidth product with excellent linearity.
• Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA
• High Current Gain
–Bandwidth Product, ft = 9 GHz @ 30 mA
• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
• Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
• Fully Ion
–Implanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel
MRF959T1
ICmax = 100 mA LOW NOISE TRANSISTORS
CASE 463
–01, STYLE 1 (SC
–90)
MAXIMUM RATINGS
Rating Collector
–Emitter Voltage Collector
–Base Vo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF951 |
ASI |
NPN Transistor |
|
| 2 | MRF951 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 3 | MRF9511 |
Motorola |
(MRF9511 / MRF957) NPN Silicon Low Noise / High-Frequency Transistors |
|
| 4 | MRF957 |
Motorola |
(MRF9511 / MRF957) NPN Silicon Low Noise / High-Frequency Transistors |
|
| 5 | MRF9582NT1 |
Freescale Semiconductor |
Silicon Lateral FET / N -Channel Enhancement-Mode MOSFET |
|
| 6 | MRF9002NR2 |
Freescale Semiconductor |
RF Power FET |
|
| 7 | MRF9002R2 |
Motorola Inc |
RF Power Field Effect Transistor Array |
|
| 8 | MRF901 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 9 | MRF901 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 10 | MRF9011 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 11 | MRF9011L |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 12 | MRF9011LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|