MRF951 NPN Transistor Datasheet

MRF951 NPN Transistor

The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θJC 100 °C/W PACKAGE STYLE Dim. Are in .

Features

• Low Noise Figure
• High Gain
• Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θJC 100 °C/W PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 0.1 mA BVCEO IC = 0.1 mA ICBO VCB = 10 V IEBO VEB = 1.0 V hFE VCE = 6.0 V IC = 5.0 mA MINIMUM TYPICAL MAXIMUM 20 10 0.1 0.1 50 200 UNITS V V µA µA --- Ccb VCB = 10 V f = 1.0 MHz 0.45 pF GNF NF50Ω VCE = 6.0 V VCE = 6.0 V .

The same part from a different manufacturer

MRF951 - Microsemi Corporation

Designed for use in high gain, low noise small-signal amplifiers. DataSheet4U.com ee DataSh ABSOLUTE MAXIMUM RATINGS .

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MRF951 - ASI