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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise Figure @ f = 1.0 G.
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MRF901 - ASI
The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. FEATURES: • Lo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF9002NR2 |
Freescale Semiconductor |
RF Power FET |
|
| 2 | MRF9002R2 |
Motorola Inc |
RF Power Field Effect Transistor Array |
|
| 3 | MRF9011 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 4 | MRF9011L |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 5 | MRF9011LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 6 | MRF9030LR1 |
Motorola |
RF Power Field Effect Transistors |
|
| 7 | MRF9030LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 8 | MRF9030LSR1 |
Motorola |
RF Power Field Effect Transistors |
|
| 9 | MRF9030MBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 10 | MRF9030MBR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS |
|
| 11 | MRF9030MR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 12 | MRF9030MR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS |
|