MRF9582NT1 - Freescale Semiconductor

MRF9582NT1 Silicon Lateral FET / N -Channel Enhancement-Mode MOSFET

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = .

Features

150 Unit Vdc Vdc Vdc Adc W °C °C DataShee DataSheet4U.com Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction - to - Case Symbol RθJC Rating 1 Value 6 Unit °C/W Unit °C Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Package Peak Temperature 260 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. DataSheet4U.com © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF9582NT1 1 RF Device Data Frees.