Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
33 pF Chip Capacitors (0805) 1.0 μF, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0.65 x 2.6 mm Microstrip 1.16 x 19.5 mm Microstrip 1.16 x 17..
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MRF9002NR2
1000 MHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
16 1
CASE 978 - 03 PLASTIC PFP - 16
N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C.
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
DRAIN 1−1 DRAIN 1−2 DRAIN 2−1 DRAIN 2−2 N.C. DRAIN 3−1 DRAIN 3−2 N.C.
(Top View) Note: Exposed backside flag is source terminal for transistors.
Tab.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF9002R2 |
Motorola Inc |
RF Power Field Effect Transistor Array |
|
| 2 | MRF901 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF901 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 4 | MRF9011 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 5 | MRF9011L |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 6 | MRF9011LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 7 | MRF9030LR1 |
Motorola |
RF Power Field Effect Transistors |
|
| 8 | MRF9030LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 9 | MRF9030LSR1 |
Motorola |
RF Power Field Effect Transistors |
|
| 10 | MRF9030MBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 11 | MRF9030MBR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS |
|
| 12 | MRF9030MR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|