MRF6414 - Motorola

MRF6414 RF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6414/D NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficiency = .

Features

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector
  –Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector
  –Emitter Leakage Current (VCE = 30 Vdc, RBE = 75 Ω) ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) hFE 30 — 120 — V(BR)CEO V(BR)CBO V(BR)EBO ICER 28 65 4 — — — — — — — — 10 Vdc Vdc Vdc mAdc Symbol Min T.