MRF6409 - Motorola

MRF6409 RF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in Class AB • Specified 26 Volts, 960 M.

Features

°C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Emitter
  –Base Breakdown Voltage (IB = 5.0 mAdc, IC =0) Collector
  –Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector
  –Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)EBO V(BR)CES ICES 24 4.0 55 — 30 5.0 60 — — — — 6.0 Vdc Vdc Vdc mA (1) Thermal resistance is determined under specified RF operating condition. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF6409 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25.