MRF6401 - Motorola

MRF6401 RF LINEAR POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6401/D NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applicat.

Features

VCEO VCBO VEBO TJ PD Tstg Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Symbol Min Typ Value 22 45 3.5 200 5.8 0.033
  – 65 to +150 Unit Vdc Vdc Vdc °C Watts W/°C °C THERMAL CHARACTERISTICS Max 30 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 10 mAdc, RB = 75 Ω) Emitter
  –Base Breakdown Voltage (IE = 0.25 mAdc) Collector
  –Base Breakdown Voltage (IC = 1 mAdc) V(BR)CER V(BR)EBO V(BR)CBO 28 3.5 45 — — — — — — Vdc Vdc Vdc (1) Thermal resistance is determined under sp.