MRF6408 - Motorola

MRF6408 RF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6408/D NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • To be used in class AB for PCN–PCS / Cellular Rad.

Features

ge Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value 24 60 4 5 60 0.35
  – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 2.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Emitter
  –Base Breakdown Voltage (IB = 5.0 mAdc, IC = 0) Collector
  –Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)EBO V.