MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF641/D NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 15 Watts Minimum Gain = 7.8 dB Efficiency = 55.
VCBO VEBO IC PD Tstg Value 16 36 4.0 3.0 43.7 0.25
– 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 4.0 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter
–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)EBO ICES 16 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF6401 |
Motorola |
RF LINEAR POWER TRANSISTOR | |
2 | MRF6402 |
Motorola |
RF POWER TRANSISTOR | |
3 | MRF6404 |
Motorola |
RF POWER TRANSISTOR | |
4 | MRF6408 |
Motorola |
RF POWER TRANSISTOR | |
5 | MRF6409 |
Motorola |
RF POWER TRANSISTOR | |
6 | MRF6414 |
Motorola |
RF POWER TRANSISTOR | |
7 | MRF644 |
Motorola |
RF POWER TRANSISTOR | |
8 | MRF646 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
9 | MRF648 |
Motorola Semiconductor |
RF POWER TRANSISTOR | |
10 | MRF604 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
11 | MRF604 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
12 | MRF607 |
Motorola |
HIGH FREQUENCY TRANSISTOR |