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MRF587 |
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| Part Number | MRF587 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideb... |
| Features |
YLE 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IC = 0, IE = 0.1 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 17 34 2.5 — — — — — — — — 50 Vdc Vdc Vdc µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) NOTE: 1. 300 µs pulse on Tektronix 576 or equivalent. hFE 50 — 200 — (continued) REV 6 RF DEVICE DAT... |
| Document |
 MRF587 Data Sheet
PDF 123.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF580 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|