SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% • .
l RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector
–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued)
NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
1
MRF448
.
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D NPN Silicon RF Power Transistor Des.
HG Semiconductors MRF448HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed primarily for hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF4427 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
2 | MRF4427R2 |
Motorola |
HIGH-FREQUENCY TRANSISTOR | |
3 | MRF448A |
MA-COM |
The RF Line NPN Silicon Power Transistor | |
4 | MRF449 |
Motorola |
RF POWER TRANSISTORS | |
5 | MRF401 |
Motorola |
RF POWER TRANSISTORS | |
6 | MRF402 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
7 | MRF403 |
NKK |
Half-Inch Diameter Process Sealed Rotaries | |
8 | MRF406 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
9 | MRF410 |
eleflow |
NPN Bipolar RF power transistor | |
10 | MRF412 |
Motorola |
RF POWER TRANSISTOR | |
11 | MRF421 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor | |
12 | MRF421 |
Motorola |
RF POWER TRANSISTORS |