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Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45% Intermodulation distortion @ 250 W (PEP) - IMD = -30 dB (max.) 100% tested for load mismatch at all phase angl.
in. Typ. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 50 — Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 100 — Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 — Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4 — Note: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. 1 — Vdc — Vdc — Vdc — Vdc (continued) MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF448 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 2 | MRF448 |
Motorola |
RF POWER TRANSISTOR |
|
| 3 | MRF448 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 4 | MRF4427 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF4427R2 |
Motorola |
HIGH-FREQUENCY TRANSISTOR |
|
| 6 | MRF449 |
Motorola |
RF POWER TRANSISTORS |
|
| 7 | MRF401 |
Motorola |
RF POWER TRANSISTORS |
|
| 8 | MRF402 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 9 | MRF403 |
NKK |
Half-Inch Diameter Process Sealed Rotaries |
|
| 10 | MRF406 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | MRF410 |
eleflow |
NPN Bipolar RF power transistor |
|
| 12 | MRF412 |
Motorola |
RF POWER TRANSISTOR |
|