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The MRF406 is Designed for 12.5 V 30 MHz Power Amplifier Applications. PACKAGE STYLE .380" 4L FLG B .112 x 45° A FEATURES INCLUDE: • Common Emitter • Output Power = 20 W (PEP) F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC O O G H I 4.0 A 20 V 40 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 C/W O O O.
INCLUDE:
• Common Emitter
• Output Power = 20 W
(PEP)
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCE VCB PDISS TJ TSTG θJC
O O
G
H I
4.0 A 20 V 40 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 C/W
O O O O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
CHARACTERISTICS
SYMBOL
BVCES BVCBO BVCEO BVEBO ICES hFE Cob Pout GPE η IMD IC = 50 mA.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF401 |
Motorola |
RF POWER TRANSISTORS |
|
| 2 | MRF402 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | MRF403 |
NKK |
Half-Inch Diameter Process Sealed Rotaries |
|
| 4 | MRF410 |
eleflow |
NPN Bipolar RF power transistor |
|
| 5 | MRF412 |
Motorola |
RF POWER TRANSISTOR |
|
| 6 | MRF421 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 7 | MRF421 |
Motorola |
RF POWER TRANSISTORS |
|
| 8 | MRF422 |
Motorola |
RF POWER TRANSISTORS |
|
| 9 | MRF422 |
Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor |
|
| 10 | MRF422 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | MRF422 |
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
| 12 | MRF422MP |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|