MRF421 RF POWER TRANSISTORS Datasheet

MRF421 RF POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP.

Features

Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector
  –Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector
  –Base Breakdown Voltage (IC = 200 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.0 — — — — — — — — — — 10 Vdc Vdc Vdc Vdc mAdc (continued) REV 1 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF421 1 .

The same part from a different manufacturer

MRF421 - Tyco Electronics

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed pri.

Related Product

No.	Partie #	Fabricant	Description
1	MRF422	Motorola	RF POWER TRANSISTORS
2	MRF422	Tyco Electronics	The RF Line NPN Silicon RF Power Transistor
3	MRF422	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR
4	MRF422	MA-COM	The RF Line NPN Silicon Power Transistor
5	MRF422MP	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR
6	MRF426	Motorola	RF POWER TRANSISTOR
7	MRF426	Tyco Electronics	The RF Line NPN Silicon RF Power Transistor
8	MRF427	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR
9	MRF428	Tyco Electronics	The RF Line NPN Silicon RF Power Transistor
10	MRF429	Motorola	RF POWER TRANSISTOR
11	MRF429	Tyco Electronics	RF POWER TRANSISTOR
12	MRF429	MA-COM	The RF Line NPN Silicon Power Transistor

MRF421 - Motorola