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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D NPN Silicon RF Low Power Transistor Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. • Low Cost SORF P.
dc Watts mW/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Max 45 Unit °C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Emitter
–Base Breakdown Voltage (IE = 100 µAdc) Collector Cutoff Current (VCE = 12 Vdc, IB = 0) V(BR)CEO V(BR)CER V(BR)EBO ICEO 20 40 2.0 — — — — — — — — 20 Vdc Vdc Vdc µAdc (continued)
NOTE: 1.Case tempera.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF4427 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF448 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 3 | MRF448 |
Motorola |
RF POWER TRANSISTOR |
|
| 4 | MRF448 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 5 | MRF448A |
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
| 6 | MRF449 |
Motorola |
RF POWER TRANSISTORS |
|
| 7 | MRF401 |
Motorola |
RF POWER TRANSISTORS |
|
| 8 | MRF402 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 9 | MRF403 |
NKK |
Half-Inch Diameter Process Sealed Rotaries |
|
| 10 | MRF406 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | MRF410 |
eleflow |
NPN Bipolar RF power transistor |
|
| 12 | MRF412 |
Motorola |
RF POWER TRANSISTOR |
|